- junction-to-case thermal resistance
- junction-to-case thermal resistance innerer Wärmewiderstand m
English-German dictionary of Electrical Engineering and Electronics. 2013.
junction-to-case thermal resistance
Schlagen Sie auch in anderen Wörterbüchern nach:
Thermal resistance in electronics — Thermal resistance is the temperature difference across a structure when a unit of heat energy flows through it in unit time. It is the reciprocal of thermal conductance. The SI units of thermal resistance are kelvins per watt, or the equivalent… … Wikipedia
Junction temperature — is the highest temperature of the actual semiconductor in an electronic device. In operation it is higher than case temperature, the temperature of the part s exterior. The difference is equal to the amount of heat transferred from the junction… … Wikipedia
Thermal runaway — refers to a situation where an increase in temperature changes the conditions in a way that causes a further increase in temperature leading to a destructive result. It is a kind of positive feedback.Chemical engineeringIn chemical engineering,… … Wikipedia
Thermal management of electronic devices and systems — Heat generated by electronic devices and circuitry must be dissipated to improve reliability and prevent premature failure. Techniques for heat dissipation can include heatsinks and fans for air cooling, and other forms of computer cooling such… … Wikipedia
p-n junction — A silicon p–n junction with no applied voltage. A p–n junction is formed at the boundary between a P type and N type semiconductor created in a single crystal of semiconductor by doping, for example by ion implantation, diffusion of dopants, or… … Wikipedia
Bipolar junction transistor — BJT redirects here. For the Japanese language proficiency test, see Business Japanese Proficiency Test. PNP … Wikipedia
Power MOSFET — A Power MOSFET is a specific type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed to handle large power. Compared to the other power semiconductor devices (IGBT, Thyristor...), its main advantages are high commutation speed … Wikipedia
ГОСТ 20332-84: Тиристоры. Термины, определения и буквенные обозначения параметров — Терминология ГОСТ 20332 84: Тиристоры. Термины, определения и буквенные обозначения параметров оригинал документа: 110. Время включения тиристора E. Turn on time F. Temps d’amorcage tувкл, tвкл Интервал времени, в течение которого тиристор… … Словарь-справочник терминов нормативно-технической документации
ГОСТ 25529-82: Диоды полупроводниковые. Термины, определения и буквенные обозначения параметров — Терминология ГОСТ 25529 82: Диоды полупроводниковые. Термины, определения и буквенные обозначения параметров оригинал документа: 87. Временная нестабильность напряжения стабилизации стабилитрона D. Zeitliche Instabilitat der Z Spannung der Z… … Словарь-справочник терминов нормативно-технической документации
semiconductor device — ▪ electronics Introduction electronic circuit component made from a material that is neither a good conductor nor a good insulator (hence semiconductor). Such devices have found wide applications because of their compactness, reliability,… … Universalium
Heat transfer — is a discipline of thermal engineering that concerns the exchange of thermal energy from one physical system to another. Heat transfer is classified into various mechanisms, such as heat conduction, convection, thermal radiation, and phase change … Wikipedia
